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APTGL90DSK120T3G
Dual Buck chopper Trench + Field Stop IGBT4 Power module
13 14
VCES = 1200V IC = 90A @ Tc = 80C
Application * AC and DC motor control * Switched Mode Power Supplies
Q1 18 19
Q2 11 10
22 23 CR1
7 8 CR2
29 15
30
31 R1
32 16
Features * Trench + Field Stop IGBT 4 Technology - Low voltage drop - Low leakage current - Low switching losses - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated - Symmetrical design * Kelvin emitter for easy drive * Very low stray inductance * High level of integration * Internal thermistor for temperature monitoring Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * Easy paralleling due to positive TC of VCEsat * Each leg can be easily paralleled to achieve a single buck of twice the current capability * RoHS compliant
28 27 26 25 29 30
23 22
20 19 18 16 15
31 32 2 3 4 7 8 10 11 12
14 13
All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 ...
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area Tc = 25C Tc = 80C Tc = 25C Tc = 25C Tj = 150C Max ratings 1200 110 90 150 20 385 150A @ 1150V Unit V A V W
April, 2009 1-5 APTGL90DSK120T3G - Rev 0
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTGL90DSK120T3G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) VGE(th) IGES Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V ; VCE = 1200V VGE =15V Tj = 25C IC = 75A Tj = 150C VGE = VCE, IC = 3 mA VGE = 20 V, VCE = 0V Min Typ 1.85 2.25 5.8 Max 250 2.25 6.5 600 Unit A V V nA
5
Dynamic Characteristics
Symbol Characteristic Cies Coes Cres QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Short Circuit data Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE= 15V ; VCE=600V IC=75A Inductive Switching (25C) VGE = 15V VBus = 600V IC = 75A RG = 2.2 Inductive Switching (150C) VGE = 15V VBus = 600V IC = 75A RG = 2.2 TJ = 25C VGE = 15V VBus = 600V TJ = 150C IC = 75A TJ = 25C RG = 2.2 TJ = 150C VGE 15V ; VBus = 900V tp 10s ; Tj = 150C Min Typ 4.4 0.29 0.24 0.57 130 20 300 45 150 35 350 80 3.3 8.5 4.2 7.2 300 mJ mJ A Max Unit nF C
ns
ns
Chopper diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage IF = 100A IF = 150A IF = 100A IF = 100A VR = 800V di/dt =200A/s Test Conditions VR=1200V Tj = 25C Tj = 125C Tc = 80C Min 1200 Typ Max 100 500 100 2.4 2.7 1.8 385 480 1055 5240 3
April, 2009 2-5 APTGL90DSK120T3G - Rev 0
Unit V A A V
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
Reverse Recovery Time Reverse Recovery Charge
ns nC
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APTGL90DSK120T3G
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 2.5 Min Typ Max 0.39 0.55 175 125 100 4.7 110 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
To heatsink
M4
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol R25 R25/R25 B25/85 B/B Characteristic Resistance @ 25C T25 = 298.15 K TC=100C
RT = R25 1 1 RT: Thermistor value at T exp B25 / 85 T - T 25
T: Thermistor temperature
Min
Typ 50 5 3952 4
Max
Unit k % K %
SP3 Package outline (dimensions in mm)
1
12
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
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3-5
APTGL90DSK120T3G - Rev 0
April, 2009
17
28
APTGL90DSK120T3G
Typical Performance Curve
150 125 IC (A) 100 75 50 25 0 0 1 2 VCE (V) 3 4
TJ=25C
Output Characteristics (VGE=15V)
Output Characteristics 150 125 100 IC (A) TJ = 150C
VGE=19V VGE=15V
TJ=150C
75 50 25 0 0 1 2 VCE (V) 3 4
VGE=9V
150 125 100 IC (A)
Transfert Characteristics
TJ=25C
30 25 20 E (mJ) 15 10
Energy losses vs Collector Current
VCE = 600V VGE = 15V RG = 2.2 TJ = 150C
Eon
75 50 25 0 5 6 7 8 9 VGE (V) Switching Energy Losses vs Gate Resistance 20
Eon
TJ=150C
5 0 10 11 12 13 0
Eoff
25
50
75 IC (A)
100
125
150
Reverse Bias Safe Operating Area 160
16 E (mJ)
12
Eoff
VCE = 600V VGE =15V IC = 75A TJ = 150C
120 IC (A)
80
VGE=15V TJ=150C RG=2.2
8
40
4 0 5 10 15 20 Gate Resistance (ohms) 25
0 0 300 600 900 VCE (V) 1200 1500
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.4 Thermal Impedance (C/W) 0.35 0.3 0.25 0.2 0.15 0.1 0.05
0.9 0.7
IGBT
0.3 0.1 0.05
0 0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
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4-5
APTGL90DSK120T3G - Rev 0
Single Pulse
April, 2009
0.5
APTGL90DSK120T3G
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 120 100 80 60 40 20 0 20 40 60 IC (A) 80 100 120
Hard switching ZCS ZVS
Forward Characteristic of diode
IF, Forward Current (A)
VCE=600V D=50% RG=2.2 TJ=150C Tc=75C
200 175 150 125 100 75 50 25 0 0 0.5 1 1.5 2 2.5 3
TJ=25C TJ=125C
VF, Anode to Cathode Voltage (V)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.6 Thermal Impedance (C/W) 0.5 0.4 0.3 0.2 0.1 0.9 0.7 0.5 0.3 0.1 Diode
0.05 0 0.00001
Single Pulse 0.0001 0.001 0.01 0.1 1 10
Rectangular Pulse Duration in Seconds
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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5-5
APTGL90DSK120T3G - Rev 0
April, 2009

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